Development of Critical Material and Device Technology for GeSn Based Integration
Student: Grey Abernathy
Degree: Ph.D., December 2021
Major Professor: Dr. Fisher Yu
Photonics can provide an improved method for complicated signal processing in conventional microwave applications.
Reduced SWAP at low cost is achieved when foundry manufacturing is available for photonic circuits on-chip.
The creation of integrated components (laser, modulator, etc.) is an integral addition for future microwave photonic circuits.
- Incorporation of optical “on-chip” devices is considered to be paramount for the development of Photonic Integrated Circuits.
- Wireless communications and defense RF applications can be achieved using a hybrid integration strategy for VCSELs.
- Material growth-maturation is currently underway for the GeSn material system, as well as characterization for material properties.
- UHV-CVD growth of GeSn on sapphire investigated and template development, as well as potential for sapphire waveguides.
- Quantum well advancements display promise for active devices (lasers, detectors, etc).
- A monolithic integration strategy for GeSn lasers with CMOS circuits will be explored.
- Developing and optimizing select component architecture.
- Feasibility study of growing GeSn on sapphire.
- Designing, developing, and evaluating optical waveguides for passive component creation.
- Technology development for various device integration in microwave photonic circuits.
- Using methods already established for optical circuit creation and modification, it will be possible to develop techniques for microwave photonic optical circuits.
The inclusion of CMOS compatible active components is an integral step in the creation of microwave photonic circuits to replace modern electronic microwave devices.
Addition of more components with the proper arrangement and switching may be able to come closer to a realized Photonic Integrated Circuit.