Growth and Characterization of Group-IV thin films by PEUHV-CVD
Student: Joshua M. Grant
Degree: M.S., May 2020
Major Professor: Dr. Fisher Yu
The increase in Sn content in Ge based films lowers the Γ valley energy level to allow a direct band gap material states.
Growth window is narrow with.
CVD offers high growth rates increasing throughput and reducing cost.
Use of gas mixing system for precise atomic ratio for improved compositional control and repeatability.
Design of insitu characterization tooling for improved understanding of growth mechanisms.
- Growth of GeSn on Ge buffered Si to increase Sn incorporation by developing GeSn buffers to control strain for Sn compositional improvements.
- Growth using gas mixing system for improved SnCl4/GeH4 ratio control.
- Same day characterization of samples for faster research progress.
- Sn incorporation increases as growth temperature decreases.
- Consistent and repeatable high quality buffer layers.
- SiH4 flow rate dependent SiGe composition on sapphire.
No conclusions at this time.
Growth refinement using gas mixing system.
Upgrade of CVD system to expand capabilities.