Fabrication Process of Micro-hall Effect Devices
Student: Paolo Vargas
Degree: M.S., May 2020
Major Professor: Dr. Alan Mantooth
Research Area(s):
Microelectronics
Photonics
Background/Relevance
- Due to SiC’s wide band gap, Silicon carbide electronics are capable of operating at high temperatures and at very high voltages.
- Power modules for high voltage applications require material with SiC properties
Innovation
-
Power modules fabricated in SiC will be the next generation of high capacity power modules.
Approach
- Familiarize with the nanofabrication process from the first process of fabrication
- Nanofabrication steps covered:
- Photolithography
- Material Etching
- Metallization
- Additional work:
- Material growth
- Device characterization
Key Results
- Learned the first basic process steps in nanofabrication
- Learned the basics of material growth
- Learned how to characterize micro-hall effect devices
- Fabricated and characterized a Schottky diode
Conclusions
- Additional training time is required before micro-hall effect devices are fabricated
- Advanced metallization and advanced material etching practices are necessary
Future Work
- Continue to get training on metallization and etching equipment
- Begin to fabricate micro-hall devices
- Transition to SiC devices