Fabrication Process of Micro-hall Effect Devices

Student: Paolo Vargas

Degree: M.S., May 2020

Major Professor: Dr. Alan Mantooth

Research Area(s):



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  • Due to SiC’s wide band gap, Silicon carbide electronics are capable of operating at high temperatures and at very high voltages.
  • Power modules for high voltage applications require material with SiC properties


  • Power modules fabricated in SiC will be the next generation of high capacity power modules.


  • Familiarize with the nanofabrication process from the first process of fabrication
  • Nanofabrication steps covered:
    • Photolithography
    • Material Etching
    • Metallization
  • Additional work:
    • Material growth
    • Device characterization

Key Results

  • Learned the first basic process steps in nanofabrication
  • Learned the basics of material growth
  • Learned how to characterize micro-hall effect devices
  • Fabricated and characterized a Schottky diode


  • Additional training time is required before micro-hall effect devices are fabricated
  • Advanced metallization and advanced material etching practices are necessary

Future Work

  • Continue to get training on metallization and etching equipment
  • Begin to fabricate micro-hall devices
  • Transition to SiC devices