Optoelectronic Properties of In(Ga)N/GaN and In(Ga)As/GaAs Ultra-Thin Quantum Wells
Student: Yurii Maidaniuk
Degree: Ph.D., December 2020
Major Professor: Dr. Gregory Salamo
Aluminum and Gallium Nitride (AlN/GaN) offer opportunity for UV emitters, detectors, quantum computing, solar energy systems.
Wide band gap materials are also very important for high-power and high-frequency electronic devices.
Ultra-thin InGaAs/GaAs single QW is crucial to understand as being a building block of novel IR photodetectors.
- Fabrication of short period InN/InAs is one possible way to form a material with novel 2D properties to meet these needs.
- We are currently successful at bringing new ideas to the growth, fabrication, and characterization of these novel materials.
- InN/GaN multiple quantum well at different growth temperatures.
- TEM cross-section demonstrating high quality interfaces.
- Shown here: Photoluminescence is used to determine tunability.
- Shown here: Time-resolved PL measurements of sub-monolayer In(Ga)As/GaAs structures to demonstrate strong lifetime dependence on In content.
The optimal growth temperature has been found by analyzing PL data which is equal to 580 C.
The quantum well composition is determined to be InGaN instead of InN as was originally designed. The equivalent result was obtained for In(Ga)As/GaAs QWs
We demonstrated the tunability of 2D wells which therefore can meet the intended applications
Full analysis of the TEM/STEM results on In(Ga)As/GaAs structures in order to prove segregation mechanism of QW formation.
Investigate how some of the parameters of growth change optical characteristics of the sample.